AP4506GEM-HF Advanced Power Electronics Corp., AP4506GEM-HF Datasheet - Page 7

• Manufacturer Part Number: AP4506GEM-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design,low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4506GEM-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 30
• Rds(on) / Max(m?) Vgs@4.5v: 36
• Qg (nc): 8.3
• Qgs (nc): 1.5
• Qgd (nc): 4
• Id(a): 6.4
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

P-Channel
0.01
100
0.1
12
10
8
4
0
1
0
0.1
Fig 11. Switching Time Waveform
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
90%
10%
V
V
Single Pulse
GS
DS
T
c
-V
=25
DS
Q
t
o
G
d(on)
C
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
10
1
I
V
t
D
r
DS
= -5 A
= -24 V
20
10
t
d(off)
t
f
100ms
100us
10ms
1ms
DC
1s
100
30
Fig 10. Effective Transient Thermal Impedance
10000
1000
0.01
100
0.1
10
1
0.001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
-4.5V
0.01
Duty factor=0.5
0.2
0.02
0.05
0.1
V
Single Pulse
G
5
0.01
-V
Q
DS
GS
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
0.1
Q
13
G
AP4506GEM-HF
GD
Charge
17
1
P
DM
Duty factor = t/T
Peak T
R
21
thja
=135
j
= P
t
f=1.0MHz
o
C/W
10
DM
T
x R
25
thja
C
+ T
C
C
Q
a
oss
rss
iss
29
100
7