Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design,low on-resistance and cost-effectiveness

AP4506GEM-HF

Manufacturer Part NumberAP4506GEM-HF
DescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design,low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP4506GEM-HF datasheet
 


Specifications of AP4506GEM-HF

Vds30VVgs±20V
Rds(on) / Max(m?) Vgs@10v30Rds(on) / Max(m?) Vgs@4.5v36
Qg (nc)8.3Qgs (nc)1.5
Qgd (nc)4Id(a)6.4
Pd(w)2ConfigurationComplementary N-P
PackageSO-8  
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AP4506GEM-HF
N-CH Electrical Characteristics@ T
Symbol
Parameter
BV
Drain-Source Breakdown Voltage
DSS
R
Static Drain-Source On-Resistance
DS(ON)
V
Gate Threshold Voltage
GS(th)
g
Forward Transconductance
fs
I
Drain-Source Leakage Current
DSS
Drain-Source Leakage Current (T
I
Gate-Source Leakage
GSS
Q
Total Gate Charge
g
Q
Gate-Source Charge
gs
Q
Gate-Drain ("Miller") Charge
gd
t
Turn-on Delay Time
d(on)
t
Rise Time
r
t
Turn-off Delay Time
d(off)
t
Fall Time
f
C
Input Capacitance
iss
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
rss
Source-Drain Diode
Symbol
Parameter
V
Forward On Voltage
SD
t
Reverse Recovery Time
rr
Q
Reverse Recovery Charge
rr
o
=25
C(unless otherwise specified)
j
Test Conditions
V
=0V, I
=250uA
GS
D
2
V
=10V, I
=6A
GS
D
V
=4.5V, I
GS
D
V
=V
, I
=250uA
DS
GS
D
V
=10V, I
=6A
DS
D
V
=24V, V
DS
GS
o
V
=24V, V
=70
C)
j
DS
GS
V
=+20V, V
GS
2
I
=6A
D
V
=24V
DS
V
=4.5V
GS
2
V
=15V
DS
I
=1A
D
R
=3.3Ω,V
G
GS
R
=15Ω
D
V
=0V
GS
V
=25V
DS
f=1.0MHz
Test Conditions
2
I
=1.5A, V
S
GS
2
I
=6A, V
=0V
S
GS
dI/dt=100A/µs
Min.
Typ.
30
-
-
-
=4A
-
-
1
-
-
17
=0V
-
-
=0V
-
-
=0V
-
-
DS
-
8.3
-
1.5
-
4
-
6
-
5.6
=10V
-
17
-
3.6
-
575
-
100
-
70
Min.
Typ.
=0V
-
-
-
19
-
14
Max. Units
-
V
30
mΩ
36
mΩ
3
V
-
S
uA
1
uA
25
uA
+30
nC
13
nC
-
nC
-
ns
-
-
ns
ns
-
ns
-
920
pF
pF
-
pF
-
Max. Units
1.3
V
-
ns
-
nC
2