Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design,low on-resistance and cost-effectiveness

AP4506GEM-HF

Manufacturer Part NumberAP4506GEM-HF
DescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design,low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP4506GEM-HF datasheet
 


Specifications of AP4506GEM-HF

Vds30VVgs±20V
Rds(on) / Max(m?) Vgs@10v30Rds(on) / Max(m?) Vgs@4.5v36
Qg (nc)8.3Qgs (nc)1.5
Qgd (nc)4Id(a)6.4
Pd(w)2ConfigurationComplementary N-P
PackageSO-8  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
Page 7/7

Download datasheet (118Kb)Embed
Prev
P-Channel
12
I
= -5 A
D
V
= -24 V
DS
8
4
0
0
10
Q
, Total Gate Charge (nC)
G
Fig 7. Gate Charge Characteristics
100
10
1
0.1
o
T
=25
C
c
Single Pulse
0.01
0.1
1
-V
, Drain-to-Source Voltage (V)
DS
Fig 9. Maximum Safe Operating Area
V
DS
90%
10%
V
GS
t
t
r
d(on)
Fig 11. Switching Time Waveform
10000
1000
100
10
1
20
30
Fig 8. Typical Capacitance Characteristics
1
100us
1ms
10ms
0.1
100ms
1s
DC
0.01
10
100
0.001
Fig 10. Effective Transient Thermal Impedance
-4.5V
t
t
d(off)
f
Fig 12. Gate Charge Waveform
AP4506GEM-HF
f=1.0MHz
5
9
13
17
21
25
-V
, Drain-to-Source Voltage (V)
DS
Duty factor=0.5
0.2
0.1
0.05
P
DM
t
0.02
T
0.01
Duty factor = t/T
Peak T
= P
x R
j
DM
thja
Single Pulse
o
R
=135
C/W
thja
0.01
0.1
1
10
t , Pulse Width (s)
V
G
Q
G
Q
Q
GS
GD
Charge
C
iss
C
oss
C
rss
29
+ T
a
100
Q
7