AP4509AGH-HF Advanced Power Electronics Corp., AP4509AGH-HF Datasheet - Page 2

• Manufacturer Part Number: AP4509AGH-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4509AGH-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 10
• Rds(on) / Max(m?) Vgs@4.5v: 16
• Qg (nc): 15
• Qgs (nc): 3
• Qgd (nc): 10
• Id(a): 14
• Pd(w): 3.13
• Configuration: Complementary N-P
• Package: TO-252-4L

BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
V
t
Q
N-CH Electrical Characteristics@ T
Source-Drain Diode
AP4509AGH-HF
DSS
GSS
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
gs
gd
rr
DSS
Symbol
Symbol
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
2
2
2
2
2
j
=25
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
f=1.0MHz
I
I
dI/dt=100A/µs
D
D
S
S
GS
GS
GS
DS
DS
DS
GS
DS
GS
DS
GS
GS
DS
G
=7A
=7A
=2.6A, V
=7A, V
=3.3Ω
o
=V
=10V, I
=24V, V
=24V
=15V
=25V
=0V, I
=10V, I
=5V, I
=+20V, V
=4.5V
=10V
=0V
C(unless otherwise specified)
GS
Test Conditions
Test Conditions
GS
, I
D
D
GS
D
=250uA
=7A
=0V
D
D
=250uA
GS
=11A
=7A
=0V
DS
=0V
=0V
Min.
Min.
30
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Typ.
715
220
160
21
15
10
10
25
11
25
20
3
7
-
-
-
-
-
-
-
+100
1140
Max. Units
Max. Units
1.2
10
16
10
24
3
-
-
-
-
-
-
-
-
-
-
-
-
mΩ
mΩ
nC
nC
nC
nC
uA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
2