AP4509AGH-HF Advanced Power Electronics Corp., AP4509AGH-HF Datasheet - Page 7

• Manufacturer Part Number: AP4509AGH-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4509AGH-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 10
• Rds(on) / Max(m?) Vgs@4.5v: 16
• Qg (nc): 15
• Qgs (nc): 3
• Qgd (nc): 10
• Id(a): 14
• Pd(w): 3.13
• Configuration: Complementary N-P
• Package: TO-252-4L

P-Channel
0.01
100
0.1
10
10
8
6
4
2
0
1
0.01
0
Fig 11. Switching Time Waveform
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Operation in this area
Single Pulse
limited by R
V
90%
10%
T
V
DS
A
GS
=25
-V
DS(ON)
DS
Q
o
10
0.1
C
t
G
I
V
, Drain-to-Source Voltage (V)
d(on)
D
DS
, Total Gate Charge (nC)
= -5 A
= -24 V
t
r
20
1
t
d(off)
30
10
t
f
100ms
100us
10ms
1ms
DC
1s
100
40
Fig 10. Effective Transient Thermal Impedance
2000
1600
1200
0.001
800
400
0.01
0.1
0
1
0.0001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
-4.5V
0.02
0.01
V
0.05
0.2
0.1
Single Pulse
Duty factor=0.5
0.001
G
5
-V
Q
GS
DS
0.01
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
Q
13
0.1
G
GD
AP4509AGH-HF
Charge
17
1
P
DM
21
Duty factor = t/T
Peak T
Rthja=75℃/W
10
j
t
= P
f=1.0MHz
DM
T
25
x R
100
thja
C
C
C
+ T
Q
oss
rss
iss
A
29
1000
7