Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP4509AGM-HF

Manufacturer Part NumberAP4509AGM-HF
DescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP4509AGM-HF datasheet
 


Specifications of AP4509AGM-HF

Vds30VVgs±20V
Rds(on) / Max(m?) Vgs@10v10Rds(on) / Max(m?) Vgs@4.5v16
Qg (nc)12Qgs (nc)2.5
Qgd (nc)7.5Id(a)11.2
Pd(w)2ConfigurationComplementary N-P
PackageSO-8  
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Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
▼ Low Gate Charge
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
I
@T
=25℃
Continuous Drain Current
D
A
I
@T
=70℃
Continuous Drain Current
D
A
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
A
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-CH BV
D2
D2
D1
D1
G2
P-CH BV
S2
G1
S1
SO-8
N-channel
30
+20
3
11.2
3
9.0
1
40
Parameter
3
AP4509AGM-HF
Halogen-Free Product
30V
DSS
R
10mΩ
DS(ON)
I
11.2A
D
-30V
DSS
R
21mΩ
DS(ON)
I
-8A
D
D1
D2
G2
G1
S1
S2
Rating
Units
P-channel
-30
V
+20
V
-8.0
A
-6.4
A
-30
A
2
W
-55 to 150
-55 to 150
Value
Unit
62.5
℃/W
200912221
1

AP4509AGM-HF Summary of contents

  • Page 1

    ... Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N- P- SO-8 N-channel 30 +20 3 11 Parameter 3 AP4509AGM-HF Halogen-Free Product 30V DSS R 10mΩ DS(ON) I 11.2A D -30V DSS R 21mΩ DS(ON Rating Units ...

  • Page 2

    ... AP4509AGM-HF N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS 2 Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

  • Page 3

    ... D V =-15V DS V =-4. =-15V =3.3Ω,V =-10V =15Ω = =-25V DS f=1.0MHz f=1.0MHz Test Conditions 2 I =-1.7A =-7A dI/dt=100A/µs AP4509AGM-HF Min. Typ. Max. Units - = -10 = +100 - 10 6 ...

  • Page 4

    ... AP4509AGM-HF N-Channel 40 ℃ Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Fig 5 ...

  • Page 5

    ... DC 0.001 10 100 0.0001 0.001 Fig 10. Effective Transient Thermal Impedance d(off) f Fig 12. Gate Charge Waveform AP4509AGM-HF f=1.0MHz C iss C oss C rss Drain-to-Source Voltage ( Single Pulse Duty factor = t/T -30 Peak ...

  • Page 6

    ... AP4509AGM-HF P-Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics = Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Fig 5 ...

  • Page 7

    ... Single Pulse 0.001 10 100 0.0001 0.001 Fig 10. Effective Transient Thermal Impedance V G -4. d(off) f Fig 12. Gate Charge Waveform AP4509AGM-HF f=1.0MHz C iss C oss C rss Drain-to-Source Voltage ( Duty factor = t/T -30 Peak ...