AP4509AGM-HF Advanced Power Electronics Corp., AP4509AGM-HF Datasheet - Page 6

• Manufacturer Part Number: AP4509AGM-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4509AGM-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 10
• Rds(on) / Max(m?) Vgs@4.5v: 16
• Qg (nc): 12
• Qgs (nc): 2.5
• Qgd (nc): 7.5
• Id(a): 11.2
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

P-Channel
AP4509AGM-HF
40
30
20
10
32
28
24
20
16
12
0
8
6
4
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
0
0
2
Fig 5. Forward Characteristic of
0.2
-V
T
-V
Reverse Diode
-V
GS
j
=150
DS
SD
1
4
, Gate-to-Source Voltage (V)
0.4
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
o
T
C
A
=25
0.6
o
2
6
C
T
I
0.8
D
A
=25
= -5 A
T
o
j
1
C
=25
3
8
V
G
o
= - 4.0V
C
1.2
-10V
-7.0V
-6.0V
-5.0V
1.4
4
10
1.6
1.4
1.2
1.0
0.8
0.6
1.6
1.4
1.2
1.0
0.8
0.6
0.4
40
30
20
10
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
30
I
G
D
= - 10V
= -7 A
-V
v.s. Junction Temperature
Junction Temperature
1
T
DS
T
j
0
0
, Junction Temperature (
j
, Drain-to-Source Voltage (V)
, Junction Temperature (
T
2
A
= 150
-30
50
50
o
C
3
V
100
100
o
G
C)
4
o
= - 4.0V
C)
-10V
-7.0V
-6.0V
-5.0V
150
5
150
6