AP4509GM Advanced Power Electronics Corp., AP4509GM Datasheet - Page 7

• Manufacturer Part Number: AP4509GM
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4509GM

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: ±20V
• Rds(on) / Max(m?) Vgs@4.5v: 14
• Rds(on) / Max(m?) Vgs@2.5v: 20
• Qg (nc): 23
• Qgs (nc): 6
• Qgd (nc): 14
• Id(a): 10
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

P-Channel
0.01
100
0.1
10
1
14
12
10
0.1
8
6
4
2
0
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
Single Pulse
90%
10%
T
V
V
V
A
I
GS
DS
=25
DS
D
=- 8 A
10
-V
=-24V
o
DS
C
Q
t
, Drain-to-Source Voltage (V)
G
d(on)
, Total Gate Charge (nC)
1
20
t
r
30
40
10
t
d(off)
t
50
f
100ms
100us
10ms
1ms
DC
1s
60
100
Fig 10. Effective Transient Thermal Impedance
10000
1000
0.001
100
0.01
0.1
1
0.0001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
-4.5V
V
Duty factor=0.5
G
0.001
5
0.02
0.01
0.05
0.1
0.2
-V
Single Pulse
Q
DS
GS
, Drain-to-Source Voltage (V)
0.01
9
t , Pulse Width (s)
Q
Q
13
0.1
G
GD
Charge
17
1
AP4509GM
P
DM
10
21
Duty factor = t/T
Peak T
R
thja
=135
t
j
= P
o
f=1.0MHz
C/W
T
DM
100
25
x R
thja
C
C
Q
C
+ T
iss
rss
oss
a
1000
29
7