AP4800GM Advanced Power Electronics Corp., AP4800GM Datasheet
AP4800GM
Specifications of AP4800GM
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AP4800GM Summary of contents
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... Symbol Rthj-amb Thermal Resistance Junction-ambient Data and specifications subject to change without notice Pb Free Plating Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S Parameter Parameter 3 Max. AP4800GM BV 25V DSS R 18mΩ DS(ON Rating Units ± ...
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... AP4800GM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... T = Fig 2. Typical Output Characteristics 1.8 I =9A D 1.6 =25 ℃ ℃ ℃ ℃ 1.4 1 0.6 -50 Fig 4. Normalized On-Resistance AP4800GM Drain-to-Source Voltage ( = =10V 100 Junction Temperature ( j v.s. Junction Temperature 10V 8.0V 6.0V V =4. ...
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... AP4800GM Case Temperature ( c Fig 5. Maximum Drain Current v.s. Case Temperature 100 Single Pulse 0.01 0 (V) DS Fig 7. Maximum Safe Operating Area 100 125 150 o C) 100us 0.1 1ms 10ms 100ms 0.01 1s 10s DC 0.001 10 100 Fig 8. Effective Transient Thermal Impedance 3 2 ...
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... SD Fig 11. Forward Characteristic of Reverse Diode 10000 1000 100 Fig 10. Typical Capacitance Characteristics -50 1.1 1.3 1.5 Fig 12. Gate Threshold Voltage v.s. AP4800GM f=1.0MHz ( 100 Junction Temperature Junction Temperature Ciss Ciss Ciss Ciss Coss Coss ...
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... AP4800GM Fig 13. Switching Time Circuit Fig 15. Gate Charge Circuit V 90 THE DS OSCILLOSCOPE 0.6 x RATED THE OSCILLOSCOPE 5V 0.6 x RATED d(on) r Fig 14. Switching Time Waveform ...