AP4800GYT-HF Advanced Power Electronics Corp., AP4800GYT-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP4800GYT-HF

Manufacturer Part Number
AP4800GYT-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4800GYT-HF

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
18
Rds(on) / Max(m?) Vgs@4.5v
40
Qg (nc)
8
Qgs (nc)
2
Qgd (nc)
4.6
Id(a)
11.5
Pd(w)
3.57
Configuration
Single N
Package
PMPAK 3x3

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP4800GYT-HF
Manufacturer:
AOS/万代
Quantity:
20 000
▼ Simple Drive Requirement
▼ Small Size & Lower Profile
▼ RoHS Compliant
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The PMPAK
application and lower 1.0mm profile with backside heat sink.
DS
GS
D
STG
J
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
®
3x3 package is special for DC-DC converters
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
3
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
3
Halogen-Free Product
-55 to 150
-55 to 150
S
Rating
BV
R
I
S
D
10.4
3.57
+25
30
13
40
DS(ON)
S
AP4800GYT-HF
DSS
G
Value
4.5
35
PMPAK
D
D
®
D
3x3
13mΩ
201009215
D
Units
℃/W
℃/W
30V
13A
Unit
W
V
V
A
A
A
1

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AP4800GYT-HF Summary of contents

Page 1

... Thermal Data Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter Parameter 3 AP4800GYT-HF Halogen-Free Product BV 30V DSS R 13mΩ DS(ON) I 13A ® ...

Page 2

... AP4800GYT-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... Fig 2. Typical Output Characteristics 2.0 I =10A D V =10V G 1.6 1.2 0.8 0.4 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 1.2 1.0 o =25 C 0.8 0.6 0.4 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4800GYT-HF o 10V T = 150 C A 7.0V 6. Drain-to-Source Voltage ( 100 Junction Temperature ( 100 150 ...

Page 4

... AP4800GYT- =15V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this area limited by R DS( Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...

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