AP60N03GH Advanced Power Electronics Corp., AP60N03GH Datasheet
AP60N03GH
Specifications of AP60N03GH
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AP60N03GH Summary of contents
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... Symbol Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP60N03GH/J Pb Free Plating Product BV 30V DSS R 13.5mΩ DS(ON) I 55A TO-252( TO-251(J) S Rating ...
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... AP60N03GH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... 1.4 1.2 1 0.8 0.6 - Fig 4. Normalized On-Resistance = -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. AP60N03GH/J 10V o C 8.0V 6.0V V =4. Drain-to-Source Voltage (V) DS =28A =10V 0 50 100 Junction Temperature ( 100 Junction Temperature ( ...
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... AP60N03GH =28A =16V =20V DS V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...