AP60N03GS Advanced Power Electronics Corp., AP60N03GS Datasheet
AP60N03GS
Specifications of AP60N03GS
Related parts for AP60N03GS
AP60N03GS Summary of contents
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... Symbol Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP60N03GS/P Pb Free Plating Product BV 30V DSS R 13.5mΩ DS(ON) I 55A TO-263( TO-220(P) D Rating Units 30 ± ...
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... AP60N03GS/P Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Forward Leakage GSS Q Total Gate Charge ...
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... V Fig 2. Typical Output Characteristics 1 1 1.2 1 0.8 0.6 10 -50 Fig 4. Normalized On-Resistance = -50 1 1.2 T Fig 6. Gate Threshold Voltage v.s. AP60N03GS/P o 10V C 8.0V 6.0V V =4. Drain-to-Source Voltage (V) DS =28A =10V 0 50 100 Junction Temperature ( 100 150 o , Junction Temperature ( ...
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... AP60N03GS =16V =20V DS V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...