Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP6679BGH-HF

Manufacturer Part NumberAP6679BGH-HF
DescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP6679BGH-HF datasheet
 


Specifications of AP6679BGH-HF

Vds-30VVgs±20V
Rds(on) / Max(m?) Vgs@10v9Rds(on) / Max(m?) Vgs@4.5v15
Qg (nc)44Qgs (nc)6.5
Qgd (nc)28.5Id(a)-63
Pd(w)54.3ConfigurationSingle P
PackageTO-252  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
Page 1/4

Download datasheet (99Kb)Embed
Next
Advanced Power
Electronics Corp.
▼ Low On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP6679BGJ) is
available for low-profile applications.
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
Continuous Drain Current, V
I
@T
=25℃
D
C
Continuous Drain Current, V
I
@T
=100℃
D
C
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
C
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-c
Maximum Thermal Resistance Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
G
S
Parameter
@ 10V
GS
@ 10V
GS
1
Parameter
AP6679BGH/J-HF
Halogen-Free Product
BV
-30V
DSS
R
9mΩ
DS(ON)
I
-63A
D
G
D
TO-252(H)
S
G
D
S
TO-251(J)
Rating
Units
-30
V
+20
V
-63
A
-40
A
-240
A
54.3
W
-55 to 150
-55 to 150
Value
Units
2.3
℃/W
3
62.5
℃/W
110
℃/W
201004142
1

AP6679BGH-HF Summary of contents

  • Page 1

    ... Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP6679BGH/J-HF Halogen-Free Product BV -30V DSS R 9mΩ DS(ON) I -63A TO-252( ...

  • Page 2

    ... AP6679BGH/J-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

  • Page 3

    ... Fig 2. Typical Output Characteristics 2 -40A D 1 -10V G 1.6 1.4 1.2 1.0 0.8 0.6 0 -50 Fig 4. Normalized On-Resistance 1.6 1.4 1 0.8 0.6 0.4 -50 1.6 Fig 6. Gate Threshold Voltage v.s. AP6679BGH/J-HF -10V 150 C C -7.0V -6.0V -5. 4 Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 o T ...

  • Page 4

    ... AP6679BGH/J- =-24V DS I =-30A Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this area limited by R 100 DS(ON = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...