Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP6679BGH-HF

Manufacturer Part NumberAP6679BGH-HF
DescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP6679BGH-HF datasheet
 


Specifications of AP6679BGH-HF

Vds-30VVgs±20V
Rds(on) / Max(m?) Vgs@10v9Rds(on) / Max(m?) Vgs@4.5v15
Qg (nc)44Qgs (nc)6.5
Qgd (nc)28.5Id(a)-63
Pd(w)54.3ConfigurationSingle P
PackageTO-252  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
Page 2/4

Download datasheet (99Kb)Embed
PrevNext
AP6679BGH/J-HF
Electrical Characteristics@T
Symbol
Parameter
BV
Drain-Source Breakdown Voltage
DSS
R
Static Drain-Source On-Resistance
DS(ON)
V
Gate Threshold Voltage
GS(th)
g
Forward Transconductance
fs
I
Drain-Source Leakage Current
DSS
I
Gate-Source Leakage
GSS
Q
Total Gate Charge
g
Q
Gate-Source Charge
gs
Q
Gate-Drain ("Miller") Charge
gd
t
Turn-on Delay Time
d(on)
t
Rise Time
r
t
Turn-off Delay Time
d(off)
t
Fall Time
f
C
Input Capacitance
iss
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
rss
R
Gate Resistance
g
Source-Drain Diode
Symbol
Parameter
V
Forward On Voltage
SD
t
Reverse Recovery Time
rr
Q
Reverse Recovery Charge
rr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in
copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
o
=25
C(unless otherwise specified)
j
Test Conditions
V
=0V, I
GS
D
2
V
=-10V, I
GS
V
=-4.5V, I
GS
V
=V
, I
DS
GS
D
V
=-10V, I
DS
V
=-30V, V
DS
V
= +20V, V
GS
2
I
=-30A
D
V
=-24V
DS
V
=-4.5V
GS
2
V
=-15V
DS
I
=-30A
D
R
=1Ω,V
G
GS
R
=0.5Ω
D
V
=0V
GS
V
=-25V
DS
f=1.0MHz
f=1.0MHz
Test Conditions
2
I
=-30A, V
S
GS
2
V
I
=-10A,
S
dI/dt=100A/µs
Min.
Typ.
=-250uA
-30
=-40A
-
D
=-30A
-
D
=-250uA
-1
=-30A
-
D
=0V
-
GS
=0V
-
DS
-
-
-
28.5
-
-
=-10V
-
-
-
3500 5600
-
520
-
495
-
Min.
Typ.
=0V
-
V
=0
,
-
GS
-
Max. Units
-
-
V
-
9
mΩ
-
15
mΩ
-
-3
V
60
-
S
uA
-
-10
nA
-
+100
nC
44
70
nC
6.5
-
nC
-
ns
11
-
ns
67
-
ns
37
-
ns
22
-
pF
pF
-
pF
-
2
-
Max. Units
-
-1.2
V
34
-
ns
nC
30
-
2