AP6679BGH-HF Advanced Power Electronics Corp., AP6679BGH-HF Datasheet - Page 3

• Manufacturer Part Number: AP6679BGH-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP6679BGH-HF

• Vds: -30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 9
• Rds(on) / Max(m?) Vgs@4.5v: 15
• Qg (nc): 44
• Qgs (nc): 6.5
• Qgd (nc): 28.5
• Id(a): -63
• Pd(w): 54.3
• Configuration: Single P
• Package: TO-252

240
200
160
120
80
40
14
12
10
40
30
20
10
0
8
6
0
0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
-V
-V
-V
Reverse Diode
T
SD
GS
DS
0.4
j
4
4
=150
, Source-to-Drain Voltage (V)
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
T
o
C
C
= 25
o
0.8
6
8
C
I
T
D
C
= -30 A
=25
T
℃
12
1.2
j
V
8
=25
G
= - 4.0 V
o
-7.0 V
-5.0 V
-6.0 V
C
-10V
1.6
16
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
160
120
80
40
1.6
1.4
1.2
0.8
0.6
0.4
0
1
-50
-50
0
Fig 6. Gate Threshold Voltage v.s.
I
V
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
D
G
= -40A
= -10V
Junction Temperature
-V
v.s. Junction Temperature
2
T
T
j
DS
j
0
0
, Junction Temperature (
, Junction Temperature (
, Drain-to-Source Voltage (V)
AP6679BGH/J-HF
4
T
C
50
50
= 150
6
o
C
100
100
o
o
V
C)
C)
8
G
= - 4.0 V
-7.0V
-6.0V
-5.0V
-10V
150
10
150
3