Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP6679BGH-HF

Manufacturer Part NumberAP6679BGH-HF
DescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP6679BGH-HF datasheet
 


Specifications of AP6679BGH-HF

Vds-30VVgs±20V
Rds(on) / Max(m?) Vgs@10v9Rds(on) / Max(m?) Vgs@4.5v15
Qg (nc)44Qgs (nc)6.5
Qgd (nc)28.5Id(a)-63
Pd(w)54.3ConfigurationSingle P
PackageTO-252  
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240
o
T
= 25
C
C
200
160
120
80
40
0
0
4
8
12
-V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
14
I
= -30 A
D
T
=25
C
12
10
8
6
2
4
6
-V
, Gate-to-Source Voltage (V)
GS
Fig 3. On-Resistance v.s. Gate Voltage
40
30
o
T
=150
C
T
j
20
10
0
0
0.4
0.8
1.2
-V
, Source-to-Drain Voltage (V)
SD
Fig 5. Forward Characteristic of
Reverse Diode
160
-10V
-7.0 V
-6.0 V
120
-5.0 V
V
= - 4.0 V
G
80
40
0
16
0
Fig 2. Typical Output Characteristics
2.0
I
= -40A
D
1.8
V
= -10V
G
1.6
1.4
1.2
1.0
0.8
0.6
0.4
8
10
-50
Fig 4. Normalized On-Resistance
1.6
1.4
1.2
o
=25
C
j
1
0.8
0.6
0.4
-50
1.6
Fig 6. Gate Threshold Voltage v.s.
AP6679BGH/J-HF
-10V
o
T
= 150
C
C
-7.0V
-6.0V
-5.0V
V
= - 4.0 V
G
2
4
6
8
-V
, Drain-to-Source Voltage (V)
DS
0
50
100
o
T
, Junction Temperature (
C)
j
v.s. Junction Temperature
0
50
100
o
T
, Junction Temperature (
C)
j
Junction Temperature
10
150
150
3