Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP6679BGM-HF

Manufacturer Part NumberAP6679BGM-HF
DescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP6679BGM-HF datasheet
 


Specifications of AP6679BGM-HF

Vds-30VVgs±20V
Rds(on) / Max(m?) Vgs@10v9Rds(on) / Max(m?) Vgs@4.5v15
Qg (nc)44Qgs (nc)7
Qgd (nc)28Id(a)-13.5
Pd(w)2.5ConfigurationSingle P
PackageSO-8  
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Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
I
@T
=25℃
Continuous Drain Current
D
A
I
@T
=70℃
Continuous Drain Current
D
A
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
A
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
D
D
D
G
S
S
S
SO-8
Parameter
3
3
1
Parameter
3
AP6679BGM-HF
Halogen-Free Product
BV
-30V
DSS
R
9mΩ
DS(ON)
I
-13.5A
D
D
G
S
Rating
Units
-30
V
+20
V
-13.5
A
-10.8
A
-50
A
2.5
W
-55 to 150
-55 to 150
Value
Unit
50
℃/W
200905121
1

AP6679BGM-HF Summary of contents

  • Page 1

    ... Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 Parameter Parameter 3 AP6679BGM-HF Halogen-Free Product BV -30V DSS R 9mΩ DS(ON) I -13. Rating Units -30 V +20 V -13.5 A -10.8 A ...

  • Page 2

    ... AP6679BGM-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

  • Page 3

    ... Fig 2. Typical Output Characteristics 2 =-10V 1.8 G 1.6 1.4 1.2 1.0 0.8 0.6 0.4 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.6 2.2 1 1.4 1 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP6679BGM Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 o T ...

  • Page 4

    ... AP6679BGM- -13A -24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Waveform ...