AP6679BGM-HF Advanced Power Electronics Corp., AP6679BGM-HF Datasheet - Page 4

• Manufacturer Part Number: AP6679BGM-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP6679BGM-HF

• Vds: -30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 9
• Rds(on) / Max(m?) Vgs@4.5v: 15
• Qg (nc): 44
• Qgs (nc): 7
• Qgd (nc): 28
• Id(a): -13.5
• Pd(w): 2.5
• Configuration: Single P
• Package: SO-8

AP6679BGM-HF
0.01
100
0.1
14
12
10
10
1
8
6
4
2
0
0.01
0
Fig 7. Gate Charge Characteristics
Fig 11. Switching Time Waveform
Fig 9. Maximum Safe Operating Area
V
90%
10%
I
Single Pulse
V
V
DS
D
T
= -13A
DS
GS
A
= -24V
=25
-V
20
DS
Q
o
0.1
C
t
G
d(on)
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
t
40
r
1
60
t
d(off)
10
80
t
f
100ms
100us
10ms
1ms
DC
1s
100
100
Fig 10. Effective Transient Thermal Impedance
5000
4000
3000
2000
1000
0.001
0.01
0.1
0
1
0.0001
1
Fig 8. Typical Capacitance Characteristics
-4.5V
Fig 12. Gate Charge Waveform
0.05
0.01
V
0.1
0.2
0.02
G
Single Pulse
0.001
Duty factor=0.5
5
-V
Q
DS
GS
0.01
t , Pulse Width (s)
9
, Drain-to-Source Voltage (V)
Q
Q
0.1
13
Charge
G
GD
17
1
P
Duty factor = t/T
Peak T
R
DM
thja
10
21
=125
j
= P
o
C/W
t
DM
f=1.0MHz
x R
T
100
thja
25
+ T
C
C
C
Q
a
oss
rss
iss
1000
29
4