AP6679BGP-HF Advanced Power Electronics Corp., AP6679BGP-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP6679BGP-HF

Manufacturer Part Number
AP6679BGP-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP6679BGP-HF

Vds
-30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
9
Rds(on) / Max(m?) Vgs@4.5v
15
Qg (nc)
44
Qgs (nc)
6.5
Qgd (nc)
28.5
Id(a)
-63
Pd(w)
2
Configuration
Single P
Package
TO-220
▼ Low On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial power
applications and suited for low voltage applications such as DC/DC
converters.
DS
GS
D
D
STG
J
@T
@T
@T
@T
C
C
Symbol
Symbol
C
A
=25℃
=100℃
=25℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
GS
GS
@ 10V
@ 10V
G
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
Halogen-Free Product
G
-55 to 150
-55 to 150
D
Rating
BV
R
I
D
-240
54.3
+20
-30
-63
-40
S
DS(ON)
AP6679BGP-HF
2
DSS
Value
2.3
62
TO-220(P)
201007141
-30V
9mΩ
-63A
Units
Units
℃/W
℃/W
W
W
V
V
A
A
A
1

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AP6679BGP-HF Summary of contents

Page 1

... Rthj-c Maximum Thermal Resistance Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP6679BGP-HF Halogen-Free Product BV -30V DSS R 9mΩ DS(ON) I -63A D G TO-220( Rating Units ...

Page 2

... AP6679BGP-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 2 -40A D 1 -10V G 1.6 1.4 1.2 1.0 0.8 0.6 0 -50 Fig 4. Normalized On-Resistance 1.6 1.4 1 0.8 0.6 0.4 -50 1.6 Fig 6. Gate Threshold Voltage v.s. AP6679BGP-HF -10V 150 C C -7.0V -6.0V -5. 4 Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 o T ...

Page 4

... AP6679BGP- =-24V DS I =-30A Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this area limited by R 100 DS(ON = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...

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