AP6679GI Advanced Power Electronics Corp., AP6679GI Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP6679GI

Manufacturer Part Number
AP6679GI
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP6679GI

Vds
-30V
Vgs
±25V
Rds(on) / Max(m?) Vgs@10v
9
Rds(on) / Max(m?) Vgs@4.5v
15
Qg (nc)
40
Qgs (nc)
8
Qgd (nc)
28
Id(a)
-48
Pd(w)
31.3
Configuration
Single P
Package
TO-220CFM

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP6679GI
Manufacturer:
SANYO
Quantity:
30 000
Company:
Part Number:
AP6679GI
Quantity:
79
Part Number:
AP6679GI-HF
Manufacturer:
FREESCALE
Quantity:
12 000
▼ Low Gate Charge
▼ Single Drive Requirement
▼ Lower On-resistance
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for all
commercial-industrial through hole applications.
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 10V
@ 10V
D
S
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
RoHS-compliant Product
G
D
-55 to 150
-55 to 150
Rating
BV
R
I
S
D
-300
31.3
0.25
+25
-30
-48
-30
DS(ON)
DSS
Value
65
4
TO-220CFM(I)
AP6679GI
200812302
9mΩ
-30V
-48A
Units
W/℃
Units
℃/W
℃/W
W
V
V
A
A
A
1

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AP6679GI Summary of contents

Page 1

... Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP6679GI RoHS-compliant Product BV -30V DSS R 9mΩ DS(ON) I -48A TO-220CFM(I) S Rating Units -30 ...

Page 2

... AP6679GI Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... V =-3. 0.0 4 Fig 2. Typical Output Characteristics 1.8 I =-30A D = -24A V =-10V G ℃ =25 C 1.4 1.0 0.6 -50 10 Fig 4. Normalized On-Resistance 1.6 1 0.8 0.4 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP6679GI -10V o C -8.0V -6.0V -4.5V V =-3.0V G 0.5 1.0 1.5 2 Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( C) j Junction Temperature 2 ...

Page 4

... AP6679GI -30A -25V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Waveform ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220CFM E E φ φ Part Marking Information & Packing : TO-220CFM LOGO 6679GI YWWSSS Part Number Package Code Meet Rohs requirement for low voltage MOSFET only Date Code (YWWSSS) Y: ...

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