AP6679GI Advanced Power Electronics Corp., AP6679GI Datasheet - Page 3

• Manufacturer Part Number: AP6679GI
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP6679GI

• Vds: -30V
• Vgs: ±25V
• Rds(on) / Max(m?) Vgs@10v: 9
• Rds(on) / Max(m?) Vgs@4.5v: 15
• Qg (nc): 40
• Qgs (nc): 8
• Qgd (nc): 28
• Id(a): -48
• Pd(w): 31.3
• Configuration: Single P
• Package: TO-220CFM

280
210
140
70
35
25
15
30
20
10
0
5
0
0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
C
0.2
=25
-V
-V
-V
Reverse Diode
T
SD
o
GS
DS
j
C
1
4
=150
, Source-to-Drain Voltage (V)
0.4
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
o
C
0.6
2
6
0.8
T
I
1
T
j
D
3
8
=25
C
V
= -24A
=25
G
=-3.0V
o
-8.0V
-6.0V
-4.5V
1.2
-10V
C
℃
1.4
10
4
150
100
50
1.8
1.4
1.0
0.6
1.6
1.2
0.8
0.4
0
0.0
-50
-50
Fig 6. Gate Threshold Voltage v.s.
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
V
T
I
D
C
G
=-30A
=150
=-10V
Junction Temperature
-V
0.5
v.s. Junction Temperature
T
T
DS
o
j
j
0
0
C
, Junction Temperature (
, Junction Temperature (
, Drain-to-Source Voltage (V)
1.0
50
50
1.5
AP6679GI
100
100
o
o
V
C)
C)
2.0
G
=-3.0V
-8.0V
-6.0V
-4.5V
-10V
150
150
2.5
2