AP6679GI Advanced Power Electronics Corp., AP6679GI Datasheet - Page 4

• Manufacturer Part Number: AP6679GI
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP6679GI

• Vds: -30V
• Vgs: ±25V
• Rds(on) / Max(m?) Vgs@10v: 9
• Rds(on) / Max(m?) Vgs@4.5v: 15
• Qg (nc): 40
• Qgs (nc): 8
• Qgd (nc): 28
• Id(a): -48
• Pd(w): 31.3
• Configuration: Single P
• Package: TO-220CFM

AP6679GI
1000
100
10
16
12
1
8
4
0
0.1
0
Fig 7. Gate Charge Characteristics
Fig 11. Switching Time Waveform
Fig 9. Maximum Safe Operating Area
90%
10%
V
Single Pulse
V
T
V
GS
DS
I
C
DS
D
=25
= -30A
-V
= -25V
Q
o
20
DS
C
t
G
d(on)
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
1
t
r
40
10
t
d(off)
60
100ms
100us
t
10ms
1ms
f
DC
100
80
Fig 10. Effective Transient Thermal Impedance
10000
1000
0.01
100
0.1
0.00001
1
Fig 8. Typical Capacitance Characteristics
1
-4.5V
Fig 12. Gate Charge Waveform
V
Duty factor=0.5
0.2
0.1
0.05
G
0.02
5
0.01
0.0001
-V
Single Pulse
Q
DS
GS
9
, Drain-to-Source Voltage (V)
0.001
t , Pulse Width (s)
Q
Q
13
Charge
G
GD
0.01
17
0.1
P
DM
Duty factor = t/T
Peak T
21
j
= P
f=1.0MHz
t
DM
T
x R
1
25
thjc
C
C
C
+ T
Q
oss
C
iss
rss
29
10
4