Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP6679GM-HF

Manufacturer Part NumberAP6679GM-HF
DescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP6679GM-HF datasheet
 


Specifications of AP6679GM-HF

Vds-30VVgs±25V
Rds(on) / Max(m?) Vgs@10v9Rds(on) / Max(m?) Vgs@4.5v13
Qg (nc)37Qgs (nc)3
Qgd (nc)25Id(a)-14
Pd(w)2.5ConfigurationSingle P
PackageSO-8  
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Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Characteristic
▼ RoHS Compliant
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
I
@T
=25℃
Continuous Drain Current
D
A
I
@T
=70℃
Continuous Drain Current
D
A
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
A
Linear Derating Factor
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
D
D
D
G
S
S
SO-8
S
Parameter
3
3
1
Parameter
3
AP6679GM-HF
Halogen-Free Product
BV
-30V
DSS
R
9mΩ
DS(ON)
I
-14A
D
D
G
S
Rating
Units
-30
V
+25
V
-14
A
-8.9
A
-50
A
2.5
W
0.02
W/℃
-55 to 150
-55 to 150
Value
Unit
50
℃/W
200909172
1

AP6679GM-HF Summary of contents

  • Page 1

    ... Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S Parameter Parameter 3 AP6679GM-HF Halogen-Free Product BV -30V DSS R 9mΩ DS(ON) I -14A Rating Units -30 V + ...

  • Page 2

    ... AP6679GM-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

  • Page 3

    ... Fig 2. Typical Output Characteristics =-10V G =25 ℃ 1.6 A 1.4 1.2 1.0 0.8 0 -50 Fig 4. Normalized On-Resistance 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP6679GM-HF -10V o C -7.0V -5.0V -4. -3 Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 o T ...

  • Page 4

    ... AP6679GM- -24V Total Gate Charge (nC) G Fig 9. Gate Charge Characteristics 100 Operation in this area limited by R DS( Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 7. Maximum Safe Operating Area V DS 90% ...