AP6679GM-HF Advanced Power Electronics Corp., AP6679GM-HF Datasheet
AP6679GM-HF
Specifications of AP6679GM-HF
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AP6679GM-HF Summary of contents
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... Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S Parameter Parameter 3 AP6679GM-HF Halogen-Free Product BV -30V DSS R 9mΩ DS(ON) I -14A Rating Units -30 V + ...
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... AP6679GM-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... Fig 2. Typical Output Characteristics =-10V G =25 ℃ 1.6 A 1.4 1.2 1.0 0.8 0 -50 Fig 4. Normalized On-Resistance 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP6679GM-HF -10V o C -7.0V -5.0V -4. -3 Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 o T ...
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... AP6679GM- -24V Total Gate Charge (nC) G Fig 9. Gate Charge Characteristics 100 Operation in this area limited by R DS( Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 7. Maximum Safe Operating Area V DS 90% ...