AP6679GP Advanced Power Electronics Corp., AP6679GP Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP6679GP

Manufacturer Part Number
AP6679GP
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet
1.AP6679GP.pdf (6 pages)

Specifications of AP6679GP

Vds
-30V
Vgs
±25V
Rds(on) / Max(m?) Vgs@10v
9
Rds(on) / Max(m?) Vgs@4.5v
15
Qg (nc)
42
Qgs (nc)
6
Qgd (nc)
25
Id(a)
-75
Pd(w)
89
Configuration
Single P
Package
TO-220

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
H&T Electronics H&T Electronics
Part Number:
AP6679GP-A
Quantity:
45 000
▼ Lower On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Rthj-a
Data and specifications subject to change without notice
Description
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP6679GP) are
available for low-profile applications.
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 10V
@ 10V
3
D
S
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
RoHS-compliant Product
G
4
-55 to 150
-55 to 150
D
Rating
BV
R
I
D
-300
0.71
+25
S
-30
-75
-50
89
DS(ON)
G D
DSS
Value
1.4
40
62
AP6679GS/P
S
TO-263(S)
TO-220(P)
200812304
9mΩ
-30V
-75A
Units
W/℃
℃/W
℃/W
℃/W
Unit
W
℃
℃
V
V
A
A
A
1

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AP6679GP Summary of contents

Page 1

... The TO-263 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP6679GP) are available for low-profile applications. Absolute Maximum Ratings Symbol ...

Page 2

AP6679GS/P Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate ...

Page 3

T = 240 200 160 120 0.5 1 1 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics -24A D ℃ ...

Page 4

AP6679GS -16A -24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 =25 C ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-263 Part Marking Information & Packing : TO-263 6679GS YWWSSS θ θ L1 Part Number meet Rohs requirement for low voltage MOSFET only Package Code LOGO Date Code (YWWSSS) Y： ...

Page 6

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220 E1 E φ Part Marking Information & Packing : TO-220 6679GP LOGO YWWSSS Part Number Package Code Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence Millimeters SYMBOLS MIN ...

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