Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP6679GR

Manufacturer Part NumberAP6679GR
DescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP6679GR datasheet
 


Specifications of AP6679GR

Vds-30VVgs±25V
Rds(on) / Max(m?) Vgs@10v9Rds(on) / Max(m?) Vgs@4.5v15
Qg (nc)42Qgs (nc)6
Qgd (nc)25Id(a)-75
Pd(w)89ConfigurationSingle P
PackageTO-262  
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Advanced Power
Electronics Corp.
▼ Lower On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-262 package is widely preferred for commercial-industrial
through-hole applications and suited for low voltage applications such
as DC/DC converters.
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
Continuous Drain Current, V
I
@T
=25℃
D
C
Continuous Drain Current, V
I
@T
=100℃
D
C
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
C
Linear Derating Factor
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
G
S
Parameter
3
@ 10V
GS
@ 10V
GS
1
Parameter
AP6679GR
RoHS-compliant Product
BV
-30V
DSS
R
9mΩ
DS(ON)
I
-75A
D
G
D
TO-262(R)
S
Rating
Units
-30
+25
-75
-51
-300
89
0.71
W/℃
-55 to 150
-55 to 150
Value
Unit
1.4
℃/W
62
℃/W
2008012303
V
V
A
A
A
W
1

AP6679GR Summary of contents

  • Page 1

    ... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 3 @ 10V GS @ 10V GS 1 Parameter AP6679GR RoHS-compliant Product BV -30V DSS R 9mΩ DS(ON) I -75A TO-262(R) S Rating Units -30 +25 ...

  • Page 2

    ... AP6679GR Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

  • Page 3

    ... Fig 2. Typical Output Characteristics 1 -30A -10V G 1.4 1.2 1.0 0.8 0.6 -50 10 Fig 4. Normalized On-Resistance 1.8 1.6 1 1.2 1 0.8 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP6679GR o -10V C -8.0V -6.0V -4. -3.0V G 0.5 1.0 1.5 2 Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( C) j Junction Temperature 2 ...

  • Page 4

    ... AP6679GR -16A -24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area - = ...

  • Page 5

    ... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-262 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : TO-262 6679GR LOGO YWWSSS Part Number Package Code Date Code (YWWSSS) ...