AP6679GR Advanced Power Electronics Corp., AP6679GR Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP6679GR

Manufacturer Part Number
AP6679GR
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP6679GR

Vds
-30V
Vgs
±25V
Rds(on) / Max(m?) Vgs@10v
9
Rds(on) / Max(m?) Vgs@4.5v
15
Qg (nc)
42
Qgs (nc)
6
Qgd (nc)
25
Id(a)
-75
Pd(w)
89
Configuration
Single P
Package
TO-262
▼ Lower On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
The TO-262 package is widely preferred for commercial-industrial
through-hole applications and suited for low voltage applications such
as DC/DC converters.
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 10V
@ 10V
3
D
S
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
RoHS-compliant Product
-55 to 150
-55 to 150
Rating
BV
R
I
G
D
-300
0.71
+25
-30
-75
-51
89
DS(ON)
D
DSS
Value
S
1.4
62
AP6679GR
TO-262(R)
2008012303
9mΩ
-30V
-75A
Units
W/℃
℃/W
℃/W
Unit
W
V
V
A
A
A
1

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AP6679GR Summary of contents

Page 1

... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 3 @ 10V GS @ 10V GS 1 Parameter AP6679GR RoHS-compliant Product BV -30V DSS R 9mΩ DS(ON) I -75A TO-262(R) S Rating Units -30 +25 ...

Page 2

... AP6679GR Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... Fig 2. Typical Output Characteristics 1 -30A -10V G 1.4 1.2 1.0 0.8 0.6 -50 10 Fig 4. Normalized On-Resistance 1.8 1.6 1 1.2 1 0.8 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP6679GR o -10V C -8.0V -6.0V -4. -3.0V G 0.5 1.0 1.5 2 Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( C) j Junction Temperature 2 ...

Page 4

... AP6679GR -16A -24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area - = ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-262 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : TO-262 6679GR LOGO YWWSSS Part Number Package Code Date Code (YWWSSS) ...

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