Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP6679GS

Manufacturer Part NumberAP6679GS
DescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP6679GS datasheet
 


Specifications of AP6679GS

Vds-30VVgs±25V
Rds(on) / Max(m?) Vgs@10v9Rds(on) / Max(m?) Vgs@4.5v15
Qg (nc)42Qgs (nc)6
Qgd (nc)25Id(a)-75
Pd(w)89ConfigurationSingle P
PackageTO-263  
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Advanced Power
Electronics Corp.
▼ Lower On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP6679GP) are
available for low-profile applications.
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
Continuous Drain Current, V
I
@T
=25℃
D
C
Continuous Drain Current, V
I
@T
=100℃
D
C
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
C
Linear Derating Factor
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
G
S
Parameter
3
@ 10V
GS
@ 10V
GS
1
Parameter
AP6679GS/P
RoHS-compliant Product
BV
-30V
DSS
R
9mΩ
DS(ON)
I
-75A
D
G D
TO-263(S)
S
G
TO-220(P)
D
S
Rating
Units
-30
+25
-75
-50
-300
89
0.71
W/℃
-55 to 150
-55 to 150
Value
Unit
1.4
℃/W
4
40
℃/W
62
℃/W
200812304
V
V
A
A
A
W
1

AP6679GS Summary of contents

  • Page 1

    ... Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 3 @ 10V GS @ 10V GS 1 Parameter AP6679GS/P RoHS-compliant Product BV -30V DSS R 9mΩ DS(ON) I -75A TO-263( TO-220(P) D ...

  • Page 2

    ... AP6679GS/P Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

  • Page 3

    ... Fig 2. Typical Output Characteristics 1 -30A -10V G 1.4 1.2 1.0 0.8 0.6 10 -50 Fig 4. Normalized On-Resistance 2.2 1 1.4 1 0.6 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP6679GS/P o -10V C -8.0V -6.0V -4.5V V =-3.0V G 0.5 1.0 1.5 2 Drain-to-Source Voltage ( 100 150 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( ...

  • Page 4

    ... AP6679GS -16A -24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Waveform ...

  • Page 5

    ... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-263 Part Marking Information & Packing : TO-263 6679GS YWWSSS θ θ L1 Part Number meet Rohs requirement for low voltage MOSFET only Package Code LOGO Date Code (YWWSSS) Y: ...

  • Page 6

    ... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220 E1 E φ Part Marking Information & Packing : TO-220 6679GP LOGO YWWSSS Part Number Package Code Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence Millimeters SYMBOLS MIN ...