AP6679GS Advanced Power Electronics Corp., AP6679GS Datasheet - Page 3

• Manufacturer Part Number: AP6679GS
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP6679GS

• Vds: -30V
• Vgs: ±25V
• Rds(on) / Max(m?) Vgs@10v: 9
• Rds(on) / Max(m?) Vgs@4.5v: 15
• Qg (nc): 42
• Qgs (nc): 6
• Qgd (nc): 25
• Id(a): -75
• Pd(w): 89
• Configuration: Single P
• Package: TO-263

280
240
200
160
120
80
40
30
20
10
15
13
11
0
0
9
7
0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
0.5
C
0.2
=25
-V
Reverse Diode
-V
-V
SD
T
o
1
4
DS
C
j
GS
, Source-to-Drain Voltage (V)
0.4
=150
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
1.5
o
C
0.6
2
6
T
I
0.8
D
C
2.5
= -24A
= 25
T
j
=25
1
℃
3
8
V
o
C
G
=-3.0V
-8.0V
-6.0V
-4.5V
1.2
-10V
3.5
1.4
10
4
150
100
50
1.6
1.4
1.2
1.0
0.8
0.6
2.2
1.8
1.4
0.6
0
1
0.0
-50
-50
Fig 6. Gate Threshold Voltage v.s.
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
V
I
T
D
G
C
= -30A
= -10V
=150
Junction Temperature
0.5
-V
v.s. Junction Temperature
T
o
DS
T
0
0
j
C
, Junction Temperature (
j
, Drain-to-Source Voltage (V)
, Junction Temperature (
1.0
50
50
AP6679GS/P
1.5
100
100
o
V
C)
2.0
o
C)
G
=-3.0V
-8.0V
-6.0V
-4.5V
-10V
150
150
2.5
3