AP6679GS Advanced Power Electronics Corp., AP6679GS Datasheet - Page 4

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP6679GS

Manufacturer Part Number
AP6679GS
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP6679GS

Vds
-30V
Vgs
±25V
Rds(on) / Max(m?) Vgs@10v
9
Rds(on) / Max(m?) Vgs@4.5v
15
Qg (nc)
42
Qgs (nc)
6
Qgd (nc)
25
Id(a)
-75
Pd(w)
89
Configuration
Single P
Package
TO-263
AP6679GS/P
1000
100
10
1
7
6
5
4
3
2
1
0
0.1
0
Fig 7. Gate Charge Characteristics
Fig 11. Switching Time Waveform
Fig 9. Maximum Safe Operating Area
V
90%
10%
Single Pulse
T
V
DS
C
GS
=25
10
-V
o
DS
Q
C
t
d(on)
, Drain-to-Source Voltage (V)
G
20
1
, Total Gate Charge (nC)
t
V
r
I
DS
D
= -16A
= -24V
30
10
40
t
d(off)
t
100ms
100us
f
50
10ms
1ms
DC
1s
100
60
Fig 10. Effective Transient Thermal Impedance
10000
1000
100
0.01
0.1
0.00001
1
Fig 8. Typical Capacitance Characteristics
1
-4.5V
Fig 12. Gate Charge Waveform
V
G
Duty factor=0.5
0.01
0.02
5
0.1
0.05
0.0001
0.2
-V
Single Pulse
Q
GS
DS
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
0.001
Q
13
Q
Charge
G
GD
17
0.01
P
DM
Duty factor = t/T
Peak T
21
j
= P
t
f=1.0MHz
DM
0.1
T
x R
25
thjc
+ T
C
C
C
Q
C
oss
iss
rss
29
1
4

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