AP70L02GH Advanced Power Electronics Corp., AP70L02GH Datasheet
AP70L02GH
Specifications of AP70L02GH
Related parts for AP70L02GH
AP70L02GH Summary of contents
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... Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter Max. Max. AP70L02GH/J Pb Free Plating Product BV 25V DSS R 9mΩ DS(ON) I 66A TO-252( TO-251(J) S ...
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... AP70L02GH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... Fig 2. Typical Output Characteristics 1 =10A D D =25 ℃ ℃ ℃ ℃ 1.4 1.2 1 0.8 0.6 - Fig 4. Normalized On-Resistance AP70L02GH =150 Drain-to-Source Voltage (V) DS =10A =10V 0 50 100 Junction Temperature ( ...
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... AP70L02GH Case Temperature ( c Fig 5. Maximum Drain Current v.s. Case Temperature 1000 100 = Single Pulse (V) DS Fig 7. Maximum Safe Operating Area 100 125 150 o C) 10us 100us 0.1 1ms ...
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... V (V) SD Fig 11. Forward Characteristic of Reverse Diode 10000 1000 100 Fig 10. Typical Capacitance Characteristics -50 1.1 1.3 1.5 Fig 12. Gate Threshold Voltage v.s. AP70L02GH/J f=1.0MHz Ciss Coss Crss ( 100 Junction Temperature Junction Temperature 150 ...
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... AP70L02GH Fig 13. Switching Time Circuit Fig 15. Gate Charge Circuit V 90 THE DS OSCILLOSCOPE 0.6 x RATED THE OSCILLOSCOPE 5V 0.8 x RATED d(on) r Fig 14. Switching Time Waveform ...