AP70L02GP Advanced Power Electronics Corp., AP70L02GP Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP70L02GP

Manufacturer Part Number
AP70L02GP
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet
1.AP70L02GP.pdf (6 pages)

Specifications of AP70L02GP

Vds
25V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
9
Rds(on) / Max(m?) Vgs@4.5v
18
Qg (nc)
23
Qgs (nc)
3
Qgd (nc)
17
Id(a)
66
Pd(w)
66
Configuration
Single N
Package
TO-220
▼ Low On-resistance
▼ Simple Drive Requirement
▼ Fast Switching
Data & specifications subject to change without notice
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Rthj-a
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP70L02GP) is
available for low-profile applications.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 10V
@ 10V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
RoHS-compliant Product
G
D
3
-55 to 150
-55 to 150
Rating
BV
R
I
S
D
0.53
G
±20
210
25
66
42
66
DS(ON)
DSS
D
AP70L02GS/P
Value
1.9
40
62
S
TO-263(S)
TO-220(P)
200903124
9mΩ
Units
W/℃
℃/W
℃/W
℃/W
25V
66A
Unit
W
℃
℃
V
V
A
A
A
1

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AP70L02GP Summary of contents

Page 1

... The TO-263 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP70L02GP) is available for low-profile applications. Absolute Maximum Ratings Symbol ...

Page 2

AP70L02GS/P Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current ...

Page 3

T = 200 150 100 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 23 I =10A D ℃ ...

Page 4

AP70L02GS Case Temperature ( c Fig 5. Maximum Drain Current v.s. Case Temperature 1000 100 = Single Pulse ...

Page 5

I =33A =20V Total Gate Charge (nC) G Fig 9. Gate Charge Characteristics 100 =150 C ...

Page 6

AP70L02GS Fig 13. Switching Time Circuit Fig 15. Gate Charge Circuit V 90 THE DS ...

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