AP70L02GS Advanced Power Electronics Corp., AP70L02GS Datasheet
AP70L02GS
Specifications of AP70L02GS
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AP70L02GS Summary of contents
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... Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP70L02GS/P BV 25V DSS R 9mΩ DS(ON) I 66A TO-263( TO-220(P) ...
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... AP70L02GS/P Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... G V =8.0V G 100 80 V =6. =5. =4. Fig 2. Typical Output Characteristics 1.8 1.6 1.4 1.2 1 0.8 0.6 - Fig 4. Normalized On-Resistance AP70L02GS/P o =150 Drain-to-Source Voltage ( =10A D V =10V 100 Junction Temperature ( j v ...
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... AP70L02GS Case Temperature ( c Fig 5. Maximum Drain Current v.s. Case Temperature 1000 100 = Single Pulse (V) DS Fig 7. Maximum Safe Operating Area 100 125 150 o C) 10us 100us 1ms 10ms 100ms 100 Fig 8. Effective Transient Thermal Impedance ...
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... V (V) SD Fig 11. Forward Characteristic of Reverse Diode 10000 1000 100 Fig 10. Typical Capacitance Characteristics = 1.2 Fig 12. Gate Threshold Voltage v.s. AP70L02GS ( Junction Temperature( j Junction Temperature f=1.0MHz C iss C oss C rss 26 31 100 ...
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... AP70L02GS Fig 13. Switching Time Circuit Fig 15. Gate Charge Circuit V 90 THE DS OSCILLOSCOPE 0.6 x RATED THE OSCILLOSCOPE 5V 0.8 x RATED d(on) r Fig 14. Switching Time Waveform ...