AP70T03AS Advanced Power Electronics Corp., AP70T03AS Datasheet

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP70T03AS

Manufacturer Part Number
AP70T03AS
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP70T03AS

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
9
Rds(on) / Max(m?) Vgs@4.5v
18
Qg (nc)
16.5
Qgs (nc)
5
Qgd (nc)
10.3
Id(a)
60
Pd(w)
53
Configuration
Single N
Package
TO-263
▼ ▼ ▼ ▼ Simple Drive Requirement
▼ ▼ ▼ ▼ Low Gate Charge
▼ ▼ ▼ ▼ Fast Switching
Data and specifications subject to change without notice
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Description
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP70T03AP) are available for low-profile applications.
Absolute Maximum Ratings
Thermal Data
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 10V
@ 10V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Max.
Max.
G
-55 to 175
-55 to 175
D
Rating
BV
R
I
D
± 20
0.36
195
S
30
53
60
43
DS(ON)
G D
DSS
AP70T03AS/P
Value
2.8
62
S
TO-263(S)
TO-220(P)
9mΩ
Units
W/℃
℃/W
℃/W
30V
60A
200909032
Unit
W
V
V
A
A
A

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AP70T03AS Summary of contents

Page 1

... Thermal Data Symbol Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP70T03AS/P BV 30V DSS R 9mΩ DS(ON) I 60A TO-263(S) G TO-220( Rating Units 30 ± ...

Page 2

... AP70T03AS/P Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... I =33A I =33A D D =25 ℃ ℃ ℃ ℃ V =10V C GS 1.6 1.2 0.8 0.4 -50 16 Fig 4. Normalized On-Resistance 2 1.5 1 0.5 1.5 -50 Fig 6. Gate Threshold Voltage v.s. AP70T03AS/P 10V o C 8.0V 6.0V V =4.0V GS 1.5 3 Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 25 100 Junction Temperature ( Junction Temperature 4 ...

Page 4

... AP70T03AS =33A D V =16V =20V DS V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11 ...

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