AP70T03GS Advanced Power Electronics Corp., AP70T03GS Datasheet
AP70T03GS
Specifications of AP70T03GS
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AP70T03GS Summary of contents
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... Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP70T03GS/P RoHS-compliant Product BV 30V DSS R 9mΩ DS(ON) I 60A TO-263( TO-220(P) ...
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... AP70T03GS/P Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... Fig 2. Typical Output Characteristics 1.8 =20A I =33A D 1.6 ℃ =25 V =10V G 1.4 1.2 1.0 0.8 0.6 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.5 2.1 1 1.3 0.9 1.5 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP70T03GS/P 10V o C 8.0V 6.0V V =4.0V G 1.5 3.0 4 Drain-to-Source Voltage ( 100 175 Junction Temperature ( 100 175 Junction Temperature ( ...
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... AP70T03GS =33A =16V DS V =20V DS V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 ...