AP72T02GH-HF Advanced Power Electronics Corp., AP72T02GH-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

AP72T02GH-HF

Manufacturer Part Number
AP72T02GH-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP72T02GH-HF

Vds
25V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
9
Rds(on) / Max(m?) Vgs@4.5v
15
Qg (nc)
13
Qgs (nc)
2.7
Qgd (nc)
9
Id(a)
62
Pd(w)
60
Configuration
Single N
Package
TO-252
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Characteristic
▼ RoHS Compliant
V
V
I
I
I
P
E
I
T
T
Rthj-c
Rthj-a
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP72T02GJ)
are available for low-profile applications.
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
D
D
DM
AR
STG
J
DS
GS
D
AS
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Maximum Thermal Resistance, Junction-ambient
Parameter
1
G
.
GS
GS
@ 10V
@ 10V
3
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Halogen-Free Product
4
-55 to 175
-55 to 175
AP72T02GH/J-HF
Rating
BV
R
I
D
+ 20
190
0.4
25
62
44
60
29
24
DS(ON)
G
DSS
D
Value
62.5
2.5
110
S
G D
S
TO-252(H)
TO-251(J)
200812318
9mΩ
Units
Units
25V
62A
W/℃
℃/W
℃/W
℃/W
mJ
W
V
V
A
A
A
A
1

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AP72T02GH-HF Summary of contents

Page 1

... Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V AP72T02GH/J-HF Halogen-Free Product BV 25V DSS R 9mΩ DS(ON) I 62A TO-252( TO-251(J) S ...

Page 2

... AP72T02GH/J-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... Fig 2. Typical Output Characteristics 1.8 I =30A D V =10V G 1.4 1 0.6 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.8 1 0.6 0.0 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP72T02GH/J-HF 10V o T =175 C 7.0V C 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 150 200 Junction Temperature ( ...

Page 4

... AP72T02GH/J- =30A =10V DS V =15V DS V =20V Total Gate Charge (nC) G Fig7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 120 V = =25 ...

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