AP72T03GH Advanced Power Electronics Corp., AP72T03GH Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP72T03GH

Manufacturer Part Number
AP72T03GH
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP72T03GH

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
9
Rds(on) / Max(m?) Vgs@4.5v
15
Qg (nc)
15
Qgs (nc)
3
Qgd (nc)
10
Id(a)
62
Pd(w)
60
Configuration
Single N
Package
TO-252

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP72T03GH
Manufacturer:
APEC/富鼎
Quantity:
20 000
Part Number:
AP72T03GH-HF
Manufacturer:
APEC富鼎原装
Quantity:
20 000
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Characteristic
V
V
I
I
I
P
E
I
T
T
Rthj-c
Rthj-a
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
AR
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP72T03GJ)
are available for low-profile applications.
STG
J
DS
GS
D
AS
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
1
.
GS
GS
G
@ 10V
@ 10V
3
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
RoHS-compliant Product
4
-55 to 175
-55 to 175
Rating
BV
R
I
D
+ 20
190
0.4
G
30
62
44
60
29
24
DS(ON)
D
DSS
Value
AP72T03GH/J
62.5
2.5
110
S
G D
S
TO-252(H)
TO-251(J)
200902263
9mΩ
Units
W/℃
Units
℃/W
℃/W
℃/W
30V
62A
mJ
W
V
V
A
A
A
A
1

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AP72T03GH Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V AP72T03GH/J RoHS-compliant Product BV 30V DSS R 9mΩ DS(ON) I 62A TO-252( TO-251(J) ...

Page 2

... AP72T03GH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 1.8 I =30A D V =10V G 1.4 1 0.6 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.8 1 0.6 0.0 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP72T03GH/J 10V o C 7.0V 6. Drain-to-Source Voltage ( 100 150 200 Junction Temperature ( 100 ...

Page 4

... AP72T03GH Total Gate Charge (nC) G Fig7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...

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