AP98T03GP Advanced Power Electronics Corp., AP98T03GP Datasheet

AP98T03GP

Manufacturer Part Number
AP98T03GP
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP98T03GP

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
2.8
Rds(on) / Max(m?) Vgs@4.5v
4
Qg (nc)
71
Qgs (nc)
9
Qgd (nc)
41
Id(a)
200
Pd(w)
156
Configuration
Single N
Package
TO-220
▼ Simple Drive Requirement
▼ Ultra-low On-resistance
▼ Fast Switching Characteristic
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
D
D
DM
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP98T03GP)
are available for low-profile applications.
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 10V
@ 10V
D
S
3
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
RoHS-compliant Product
G
4
-55 to 150
-55 to 150
D
Rating
BV
R
I
D
1.25
S
+20
200
125
800
156
30
DS(ON)
DSS
G
Value
AP98T03GP/S
0.8
D
40
62
S
TO-263(S)
TO-220(P)
2.8mΩ
200901063
200A
Units
W/℃
Units
℃/W
30V
℃/W
℃/W
W
V
V
A
A
A
1

Related parts for AP98T03GP

AP98T03GP Summary of contents

Page 1

... The TO-263 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP98T03GP) are available for low-profile applications. Absolute Maximum Ratings Symbol ...

Page 2

... AP98T03GP/S Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... Fig 2. Typical Output Characteristics 2.0 I =40A D V =10V G 1.6 1.2 0.8 0.4 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1 0.8 0.4 0 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP98T03GP/S o 10V 7.0V 5. Drain-to-Source Voltage ( 100 Junction Temperature ( 100 150 ...

Page 4

... AP98T03GP Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

Related keywords