AP98T03GS

Manufacturer Part NumberAP98T03GS
ManufacturerAdvanced Power Electronics Corp.
AP98T03GS datasheet
 

Specifications of AP98T03GS

Vds30VVgs±20V
Rds(on) / Max(m?) Vgs@10v2.8Rds(on) / Max(m?) Vgs@4.5v4
Qg (nc)71Qgs (nc)9
Qgd (nc)41Id(a)200
Pd(w)156ConfigurationSingle N
PackageTO-263  
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Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
▼ Ultra-low On-resistance
▼ Fast Switching Characteristic
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP98T03GP)
are available for low-profile applications.
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
Continuous Drain Current, V
I
@T
=25℃
D
C
Continuous Drain Current, V
I
@T
=100℃
D
C
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
C
Linear Derating Factor
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
G
S
Parameter
3
@ 10V
GS
@ 10V
GS
1
Parameter
AP98T03GP/S
RoHS-compliant Product
BV
30V
DSS
R
2.8mΩ
DS(ON)
I
200A
D
G
TO-220(P)
D
S
G
D
TO-263(S)
S
Rating
Units
30
+20
200
125
800
156
W
1.25
W/℃
-55 to 150
-55 to 150
Value
Units
0.8
℃/W
4
40
℃/W
62
℃/W
200901063
V
V
A
A
A
1

AP98T03GS Summary of contents

  • Page 1

    Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Ultra-low On-resistance ▼ Fast Switching Characteristic Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 ...

  • Page 2

    AP98T03GP/S Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate ...

  • Page 3

    250 200 150 100 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 3 I =30A = ...

  • Page 4

    AP98T03GP Total Gate Charge (nC) ...