AP98T03GS Advanced Power Electronics Corp., AP98T03GS Datasheet - Page 3

• Manufacturer Part Number: AP98T03GS
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP98T03GS

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 2.8
• Rds(on) / Max(m?) Vgs@4.5v: 4
• Qg (nc): 71
• Qgs (nc): 9
• Qgd (nc): 41
• Id(a): 200
• Pd(w): 156
• Configuration: Single N
• Package: TO-263

300
250
200
150
100
40
30
20
10
50
3
3
3
3
2
2
0
0
Fig 3. On-Resistance v.s. Gate Voltage
0
0
2
Fig 1. Typical Output Characteristics
Fig 5. Forward Characteristic of
0.2
V
1
V
DS
V
T
SD
4
Reverse Diode
GS
, Drain-to-Source Voltage (V)
j
0.4
=150
, Source-to-Drain Voltage (V)
T
Gate-to-Source Voltage (V)
C
= 25
o
2
C
0.6
o
C
6
T
I
0.8
C
D
3
=25
=30A
T
j
=25
o
C
1
8
o
C
V
4
G
1.2
= 3.0 V
7.0 V
5.0 V
4.5 V
10 V
10
1.4
5
150
120
1.6
1.2
0.8
0.4
2.0
1.6
1.2
0.8
0.4
Fig 2. Typical Output Characteristics
90
60
30
0
0
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
-50
-50
0
V
I
D
G
=40A
=10V
Junction Temperature
v.s. Junction Temperature
V
DS
T
T
0
0
j
j
, Drain-to-Source Voltage (V)
,Junction Temperature (
, Junction Temperature (
1
T
C
= 1 50
50
50
o
AP98T03GP/S
C
2
100
100
o
o
C)
C)
V
G
= 3.0 V
7.0V
5.0V
4.5V
10V
150
150
3
3