AP9915GK Advanced Power Electronics Corp., AP9915GK Datasheet

Page 1

... Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SOT-223 G Parameter Parameter 3 AP9915GK Pb Free Plating Product BV 20V DSS R 50mΩ DS(ON Rating Units 20 ±12 6 ...

Page 2

... AP9915GK Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... 1.6 = =4. 1.4 1.2 1.0 0.8 0 -50 Fig 4. Normalized On-Resistance 1.2 0.95 0.7 o =25 C 0.45 0.2 1.2 -50 T Fig 6. Gate Threshold Voltage v.s. AP9915GK o C 4.5V 3.5V 2.5V V =1. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 o , Junction Temperature ( Junction Temperature ...

Page 4

... AP9915GK =16V =12V DS V =10V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...