AP9916GH Advanced Power Electronics Corp., AP9916GH Datasheet

AP9916GH

Manufacturer Part Number
AP9916GH
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9916GH

Vds
18V
Vgs
±12V
Rds(on) / Max(m?) Vgs@4.5v
25
Rds(on) / Max(m?) Vgs@2.5v
40
Qg (nc)
17.5
Qgs (nc)
1.2
Qgd (nc)
7.9
Id(a)
35
Pd(w)
50
Configuration
Single N
Package
TO-252

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP9916GH
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ ▼ ▼ ▼ Low on-resistance
▼ ▼ ▼ ▼ Capable of 2.5V gate drive
▼ ▼ ▼ ▼ Low drive current
▼ ▼ ▼ ▼ Surface mount package
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
DS
GS
D
STG
J
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=125℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 4.5V
@ 4.5V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Max.
Max.
Pb Free Plating Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
± 8
0.4
18
35
16
90
50
DS(ON)
G
DSS
D
Value
S
110
2.5
G
AP9916GH/J
D
S
TO-252
TO-251
25mΩ
Units
W/℃
℃/W
℃/W
200723011
18V
35A
Unit
W
V
V
A
A
A

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AP9916GH Summary of contents

Page 1

... Thermal Data Symbol Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 4. 4. Parameter AP9916GH/J Pb Free Plating Product BV 18V DSS R 25mΩ DS(ON) I 35A TO-252 TO-251 S Rating ...

Page 2

... AP9916GH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... =2. =1. Fig 2. Typical Output Characteristics 1 1 1.4 1.2 1.0 0.8 0.6 - AP9916GH Drain-to-Source Voltage (V) DS =6A D =4. 100 Junction Temperature ( C) j v.s. Junction Temperature =4.5V G =3.5V G =2.5V G =1. 150 ...

Page 4

... AP9916GH Case Temperature ( c Fig 5. Maximum Drain Current v.s. Case Temperature 1000 100 D=0. 0 100 125 150 o C) 10us 100us 1ms 10ms 0.1 100ms 0.01 10 100 100 T , Case Temperature ( c Fig 6. Typical Power Dissipation ...

Page 5

... Fig 9. Gate Charge Characteristics 100 =150 = 0.1 0.01 0 0.4 0.8 V (V) SD Reverse Diode 1000 100 Fig 10. Typical Capacitance Characteristics 1.2 0. 0.7 0.45 0.2 -50 1.2 1.6 AP9916GH/J f=1.0MHz Ciss Coss Crss ( 100 Junction Temperature ( Junction Temperature 25 150 ...

Page 6

... AP9916GH Fig 13. Switching Time Circuit 90 THE DS OSCILLOSCOPE 0.5x RATED THE OSCILLOSCOPE 5V RATED d(on) r Fig 14. Switching Time Waveform Charge t d(off ...

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