AP9918GH Advanced Power Electronics Corp., AP9918GH Datasheet

AP9918GH

Manufacturer Part Number
AP9918GH
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9918GH

Vds
20V
Vgs
±12V
Rds(on) / Max(m?) Vgs@2.5v
14
Rds(on) / Max(m?) Vgs@1.8v
28
Qgs (nc)
16
Qgd (nc)
3
Id(a)
9
Pd(w)
45
Configuration
31.25
Package
TO-252

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AP9918GH
Quantity:
150
▼ Low on-resistance
▼ Capable of 2.5V gate drive
▼ Low drive current
▼ Surface mount package
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 4.5V
@ 4.5V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
RoHS-compliant Product
3
-55 to 150
-55 to 150
Rating
BV
R
I
31.25
D
0.25
G
+12
140
20
45
20
DS(ON)
D
DSS
S
Value
62.5
110
G D
4.0
AP9918GH/J
S
TO-252(H)
TO-251(J)
14mΩ
200901122
Units
W/℃
o
o
o
20V
45A
Unit
C/W
C/W
C/W
W
o
o
V
V
A
A
A
C
C
1

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AP9918GH Summary of contents

Page 1

... Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 4. 4. Parameter AP9918GH/J RoHS-compliant Product BV 20V DSS R 14mΩ DS(ON) I 45A TO-252( TO-251(J) ...

Page 2

... AP9918GH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... Fig 2. Typical Output Characteristics 1.8 I =18A D V =4.5V G 1.6 1.4 1.2 1.0 0.8 0.6 5 -50 T Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1.4 1 0.8 0.6 0.4 0.2 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9918GH 4.5V 4.0V 3.5V 3.0V V =2. Drain-to-Source Voltage ( 100 150 o , Junction Temperature ( 100 150 o Junction Temperature ( ...

Page 4

... AP9918GH =18A =10V DS V =12V =16V Total Gate Charge (nC) G Fig7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig9. Maximum Safe Operating Area V DS 90% 10 ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252 (0.1mm A3 Part Marking Information & Packing : TO-252 Laser Marking 9918GH YWWSSS 0.127~0.381 C Part Number Package Code LOGO Date Code (YWWSSS) Millimeters SYMBOLS MIN NOM MAX A2 1.80 2.30 A3 0.40 0.50 B1 0.40 0.70 D 6.00 6.50 D1 4.80 5. ...

Page 6

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-251 Part Marking Information & Packing : TO-251 9918GJ LOGO YWWSSS Part Number Date Code (YWWSSS) Y :Last Digit Of The Year WW :Week SSS :Sequence Millimeters SYMBOLS MIN NOM MAX A 2.20 2.30 2.40 A1 ...

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