AP9922GEO-HF Advanced Power Electronics Corp., AP9922GEO-HF Datasheet

AP9922GEO-HF

Manufacturer Part Number
AP9922GEO-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9922GEO-HF

Vds
20V
Vgs
±8V
Rds(on) / Max(m?) Vgs@4.5v
16
Rds(on) / Max(m?) Vgs@2.5v
22
Rds(on) / Max(m?) Vgs@1.8v
30
Qg (nc)
28
Qgs (nc)
4
Qgd (nc)
9
Id(a)
6.4
Pd(w)
1
Configuration
Dual N
Package
TSSOP-8
▼ Low on-resistance
▼ Capable of 1.8V Gate Drive
▼ Optimal DC/DC Battery Application
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
3
D2
S2
TSSOP-8
S2
G2
D1
S1
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
S1
G1
3
Halogen-Free Product
G1
-55 to 150
-55 to 150
Rating
BV
R
I
D
0.01
6.4
5.1
AP9922GEO-HF
20
+8
30
DS(ON)
1
DSS
Value
125
D1
S1
G2
201009294
16mΩ
6.4A
Units
W/℃
℃/W
20V
Unit
W
V
V
A
A
A
D2
S2
1

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AP9922GEO-HF Summary of contents

Page 1

... Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET TSSOP-8 D1 Parameter Parameter 3 AP9922GEO-HF Halogen-Free Product BV 20V DSS R 16mΩ DS(ON Rating Units ...

Page 2

... AP9922GEO-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... Fig 2. Typical Output Characteristics 1 4 1.4 1.2 1.0 0.8 0.6 8 -50 T Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.0 0 0.6 0.4 0.2 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9922GEO-HF 5. 150 C 4.5V A 3.5V 2.5V V =1. Drain-to-Source Voltage ( 100 150 o , Junction Temperature ( 100 ...

Page 4

... AP9922GEO- Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this area limited DS(ON Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

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