AP9924AGO-HF

Manufacturer Part NumberAP9924AGO-HF
ManufacturerAdvanced Power Electronics Corp.
AP9924AGO-HF datasheets

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Specifications of AP9924AGO-HF

Vds20VVgs±8V
Rds(on) / Max(m?) Vgs@4.5v22Rds(on) / Max(m?) Vgs@2.5v30
Qg (nc)7.2Qgs (nc)0.6
Qgd (nc)3.4Id(a)5
Pd(w)0.83ConfigurationDual N
PackageTSSOP-8  
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Advanced Power
Electronics Corp.
▼ Low on-resistance
▼ Capable of 2.5V gate drive
▼ Halogen Free & RoHS Compliant Product
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
I
@T
=25℃
Continuous Drain Current
D
A
I
@T
=70℃
Continuous Drain Current
D
A
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
A
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Parameter
3
3
1
Parameter
3
AP9924AGO-HF
Halogen-Free Product
BV
20V
DSS
R
22mΩ
DS(ON)
I
5A
D
G2
S2
S2
D
G1
S1
S1
TSSOP-8
D
D
G2
G1
S1
Rating
Units
20
+8
5
4
20
0.83
W
-55 to 150
℃
-55 to 150
℃
Value
Unit
150
℃/W
200907161
D
S2
V
V
A
A
A
1

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AP9924AGO-HF Summary of contents

  • Page 1

    ... STG T Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter Parameter 3 AP9924AGO-HF Halogen-Free Product BV 20V DSS R 22mΩ DS(ON ...

  • Page 2

    ... AP9924AGO-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

  • Page 3

    ... Fig 2. Typical Output Characteristics 1 =4.5V G 1.4 1.2 1.0 0.8 0.6 5 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1 0.8 0.4 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9924AGO- =150 C A 4.5V 3. Drain-to-Source Voltage ( 100 150 Junction Temperature ( ...

  • Page 4

    ... AP9924AGO- =16V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this 10 area limited by R DS(ON Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 ...

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