AP85T03GH Advanced Power Electronics Corp., AP85T03GH Datasheet

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... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP85T03GH/J RoHS-compliant Product BV 30V DSS R 6mΩ DS(ON) I 75A TO-252( TO-251(J) ...

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... AP85T03GH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

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... Fig 2. Typical Output Characteristics 2.0 I =45A 1.5 1.0 0.5 -50 10 Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 1 1.2 0.8 0 1.2 -50 Fig 6. Gate Threshold Voltage v.s. AP85T03GH 10V 7.0V 6.0V 4.5V V =4. Drain-to-Source Voltage (V) DS =10V 0 50 100 150 Junction Temperature ( 100 o T ,Junction Temperature ( ...

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... AP85T03GH =30A =15V =20V DS V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS ...

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... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252 (0.1mm A3 Part Marking Information & Packing : TO-252 Laser Marking 85T03GH YWWSSS 0.127~0.381 C Part Number Package Code LOGO Date Code (YWWSSS) Millimeters SYMBOLS MIN NOM MAX A2 1.80 2.30 A3 0.40 0.50 B1 0.40 0.70 D 6.00 6.50 D1 4.80 5. ...

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... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-251 Part Marking Information & Packing : TO-251 85T03GJ LOGO YWWSSS Part Number Date Code (YWWSSS) Y ：Last Digit Of The Year WW ：Week SSS ：Sequence If last "S" is numerical letter : Rohs product If last " ...