AP85T03GS-HF Advanced Power Electronics Corp., AP85T03GS-HF Datasheet

The TO-263 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters

AP85T03GS-HF

Manufacturer Part Number
AP85T03GS-HF
Description
The TO-263 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP85T03GS-HF

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
6
Rds(on) / Max(m?) Vgs@4.5v
10
Qg (nc)
33
Qgs (nc)
7.5
Qgd (nc)
24
Id(a)
75
Pd(w)
107
Configuration
Single N
Package
TO-263
▼ Low Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
Data & specifications subject to change without notice
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Rthj-a
Description
Absolute Maximum Ratings
Thermal Data
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP85T03GP) is
available for low-profile applications.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 10V
@ 10V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Halogen-Free Product
G
3
-55 to 175
-55 to 175
D
AP85T03GS/P-HF
Rating
BV
R
I
S
D
+20
350
107
0.7
30
75
55
G
DS(ON)
DSS
Value
D
1.4
40
62
S
TO-263(S)
TO-220(P)
201104256
6mΩ
Units
W/℃
Units
℃/W
℃/W
℃/W
30V
75A
W
V
V
A
A
A
1

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AP85T03GS-HF Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP85T03GS/P-HF Halogen-Free Product BV 30V DSS R 6mΩ DS(ON) I 75A TO-263(S) G TO-220(P) ...

Page 2

... AP85T03GS/P-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ∆BV /∆T Breakdown Voltage Temperature Coefficient DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... Fig 2. Typical Output Characteristics 2.0 I =45A ℃ =10V G 1.5 1.0 0.5 -50 10 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.2 0.8 0.4 0 -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. AP85T03GS/P- 10V 7.0V 6.0V 4.5V V =4. Drain-to-Source Voltage ( 100 150 200 Junction Temperature ( 100 o T ,Junction Temperature ( ...

Page 4

... AP85T03GS/P- =30A =15V DS V =20V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this area limited by R DS(ON) 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

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