The TO-263 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters

AP85T03GS-HF

Manufacturer Part NumberAP85T03GS-HF
DescriptionThe TO-263 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters
ManufacturerAdvanced Power Electronics Corp.
AP85T03GS-HF datasheet
 

Specifications of AP85T03GS-HF

Vds30VVgs±20V
Rds(on) / Max(m?) Vgs@10v6Rds(on) / Max(m?) Vgs@4.5v10
Qg (nc)33Qgs (nc)7.5
Qgd (nc)24Id(a)75
Pd(w)107ConfigurationSingle N
PackageTO-263  
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Advanced Power
Electronics Corp.
▼ Low Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
Description
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP85T03GP) is
available for low-profile applications.
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
Continuous Drain Current, V
I
@T
=25℃
D
C
Continuous Drain Current, V
I
@T
=100℃
D
C
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
C
Linear Derating Factor
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
G
S
Parameter
@ 10V
GS
@ 10V
GS
1
Parameter
AP85T03GS/P-HF
Halogen-Free Product
BV
30V
DSS
R
6mΩ
DS(ON)
I
75A
D
G
D
S
TO-263(S)
G
TO-220(P)
D
S
Rating
Units
30
V
+20
V
75
A
55
A
350
A
107
W
0.7
W/℃
-55 to 175
-55 to 175
Value
Units
1.4
℃/W
3
40
℃/W
62
℃/W
201104256
1

AP85T03GS-HF Summary of contents

  • Page 1

    ... Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP85T03GS/P-HF Halogen-Free Product BV 30V DSS R 6mΩ DS(ON) I 75A TO-263(S) G TO-220(P) ...

  • Page 2

    ... AP85T03GS/P-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ∆BV /∆T Breakdown Voltage Temperature Coefficient DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

  • Page 3

    ... Fig 2. Typical Output Characteristics 2.0 I =45A ℃ =10V G 1.5 1.0 0.5 -50 10 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.2 0.8 0.4 0 -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. AP85T03GS/P- 10V 7.0V 6.0V 4.5V V =4. Drain-to-Source Voltage ( 100 150 200 Junction Temperature ( 100 o T ,Junction Temperature ( ...

  • Page 4

    ... AP85T03GS/P- =30A =15V DS V =20V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this area limited by R DS(ON) 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...