AP85T03GS-HF Advanced Power Electronics Corp., AP85T03GS-HF Datasheet - Page 2

• Manufacturer Part Number: AP85T03GS-HF
• Description: The TO-263 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP85T03GS-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 6
• Rds(on) / Max(m?) Vgs@4.5v: 10
• Qg (nc): 33
• Qgs (nc): 7.5
• Qgd (nc): 24
• Id(a): 75
• Pd(w): 107
• Configuration: Single N
• Package: TO-263

∆BV
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
V
t
Q
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
AP85T03GS/P-HF
Electrical Characteristics@T
Source-Drain Diode
DSS
GSS
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
gs
gd
rr
DSS
DSS
Symbol
Symbol
/∆T
j
Breakdown Voltage Temperature Coefficient
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (T
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
2
copper pad of FR4 board
Parameter
Parameter
2
2
2
2
j
=25
j
=125
o
C(unless otherwise specified)
2
o
C)
V
Reference to 25℃, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
I
I
dI/dt=100A/µs
D
D
S
S
GS
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
G
D
=45A, V
=30A,
=30A
=30A
=0.5Ω
=3.3Ω,V
=V
=10V, I
=30V, V
=24V, V
=24V
=15V
=25V
=0V, I
=10V, I
=4.5V, I
=+20V, V
=4.5V
=0V
GS
V
Test Conditions
Test Conditions
, I
D
GS
GS
D
=250uA
D
D
GS
D
=250uA
GS
GS
=30A
=0V
=45A
=0
=30A
DS
=10V
=0V
=0V
V
=0V
,
D
=1mA
Min.
Min.
30
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.018
2700 4200
Typ.
11.2
Typ.
550
380
7.5
55
33
24
77
35
67
28
10
-
-
-
-
-
-
-
-
Max. Units
+100
Max. Units
250
1.3
10
52
6
3
1
-
-
-
-
-
-
-
-
-
-
-
V/℃
mΩ
mΩ
uA
uA
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
2