AP86T02GH Advanced Power Electronics Corp., AP86T02GH Datasheet

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... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 3 @ 10V GS @ 10V GS 1 Parameter AP86T02GH/J BV 25V DSS R 6mΩ DS(ON) I 75A TO-252( TO-251(J) Rating ...

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... AP86T02GH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS 2 Q Total Gate Charge ...

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... D D ℃ T =25 V =10V c G 1.4 1.0 0 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1 =25 C 0.8 j 0.4 0 Fig 6. Gate Threshold Voltage v.s. AP86T02GH/J 10V 7. 175 C 5. Drain-to-Source Voltage ( 100 125 150 175 Junction Temperature ( 100 ...

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... AP86T02GH =30A =10V DS V =15V DS V =20V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 120 V = ...

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... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252 (0.1mm A3 Part Marking Information & Packing : TO-252 86T02GH YWWSSS 0.127~0.381 C Part Number LOGO Date Code (YWWSSS) Millimeters SYMBOLS MIN NOM MAX A2 1.80 2.30 2.80 A3 0.40 0.50 0.60 B1 0.40 0.70 1.00 D 6.00 6.50 7.00 D1 4.80 5.35 5.90 E3 3.50 4.00 4.50 F 2.20 2.63 3.05 F1 0.5 0.85 E1 5.10 5.70 6.30 E2 0.50 1.10 1. ...

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... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-251 Part Marking Information & Packing : TO-251 86T02GJ LOGO YWWSSS Part Number Date Code (YWWSSS) Y ：Last Digit Of The Year WW ：Week SSS ：Sequence Millimeters SYMBOLS MIN NOM MAX A 2.20 2.30 2.40 A1 0.90 1.20 1.50 B1 0.50 0.69 0.88 B2 ...