AP90T03GR Advanced Power Electronics Corp., AP90T03GR Datasheet

Advanced Power MOSFETs from APEC provide thede signer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

AP90T03GR

Manufacturer Part Number
AP90T03GR
Description
Advanced Power MOSFETs from APEC provide thede signer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP90T03GR

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
4
Rds(on) / Max(m?) Vgs@4.5v
6
Qg (nc)
60
Qgs (nc)
8.5
Qgd (nc)
38
Id(a)
75
Pd(w)
96
Configuration
Single N
Package
TO-262
▼ Lower On- resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide thede signer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
D
D
DM
STG
J
DS
GS
D
@Tc=25℃
@Tc=100℃
@Tc=25℃
Symbol
Symbol
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
G
GS
GS
@10V
@10V
3
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
RoHS-compliant Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
G
350
±20
0.7
30
75
63
96
DS(ON)
D
DSS
Value
S
1.3
62
AP90T03GR
TO-262(R)
200802182
4mΩ
Units
W/℃
Units
℃/W
℃/W
30V
75A
W
V
V
A
A
A
1

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AP90T03GR Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 3 @10V GS @10V GS 1 Parameter AP90T03GR BV 30V DSS R 4mΩ DS(ON) I 75A TO-262(R) S Rating Units 30 V ±20 ...

Page 2

... AP90T03GR Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... A D 1.8 V =10V G 1.5 1.3 1.0 0.8 0.5 0.3 0.0 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 1 0.5 0 0.8 0.9 1 -50 T Fig 6. Gate Threshold Voltage v.s. AP90T03GR 10V o C 7.0V 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 Junction Temperature ( 100 o , Junction Temperature ( C) j Junction Temperature ...

Page 4

... AP90T03GR =15V DS V =20V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-262 Part Marking Information & Packing : TO-262 90T03GR LOGO YWWSSS Part Number Package Code meet Rohs requirement Date Code (YWWSSS) Millimeters SYMBOLS ...

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