Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

AP90T03GS

Manufacturer Part NumberAP90T03GS
DescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP90T03GS datasheet
 


Specifications of AP90T03GS

Vds30VVgs±20V
Rds(on) / Max(m?) Vgs@10v4Rds(on) / Max(m?) Vgs@4.5v6
Qg (nc)60Qgs (nc)8.5
Qgd (nc)38Id(a)75
Pd(w)96ConfigurationSingle N
PackageTO-263  
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Advanced Power
Electronics Corp.
▼ Lower On- resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
Continuous Drain Current, V
I
@T
=25℃
D
c
Continuous Drain Current, V
I
@T
=100℃
D
c
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
c
Linear Derating Factor
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
G
S
Parameter
3
@10V
GS
@10V
GS
1
Parameter
AP90T03GS
BV
30V
DSS
R
4mΩ
DS(ON)
I
75A
D
G
D
TO-263(S)
S
Rating
Units
30
V
±20
V
75
A
63
A
350
A
96
W
0.7
W/℃
-55 to 150
-55 to 150
Value
Units
℃/W
1.3
℃/W
62
1
200802183

AP90T03GS Summary of contents

  • Page 1

    ... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 3 @10V GS @10V GS 1 Parameter AP90T03GS BV 30V DSS R 4mΩ DS(ON) I 75A TO-263(S) S Rating Units 30 V ±20 ...

  • Page 2

    ... AP90T03GS Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

  • Page 3

    ... Fig 2. Typical Output Characteristics 2 1.8 1.5 1.3 1.0 0.8 0.5 0.3 0.0 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 0.5 0 -50 0.8 0 Fig 6. Gate Threshold Voltage v.s. AP90T03GS o 10V 7.0V 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 Junction Temperature ( 100 o , Junction Temperature ( C) j Junction Temperature 5 150 ...

  • Page 4

    ... AP90T03GS =15V DS V =20V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single 1 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 ...

  • Page 5

    ... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-263 Part Marking Information & Packing : TO-263 XXXXXS 90T03GS YWWSSS YWWSSS θ θ Part Number Part Number Package Code Package Code LOGO ...