AP90T03GS Advanced Power Electronics Corp., AP90T03GS Datasheet - Page 2

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

AP90T03GS

Manufacturer Part Number
AP90T03GS
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP90T03GS

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
4
Rds(on) / Max(m?) Vgs@4.5v
6
Qg (nc)
60
Qgs (nc)
8.5
Qgd (nc)
38
Id(a)
75
Pd(w)
96
Configuration
Single N
Package
TO-263
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
V
t
Q
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 75A, calculated continuous current
AP90T03GS
Electrical Characteristics@T
Source-Drain Diode
DSS
GSS
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
gs
gd
rr
based on maximum allowable junction temperature is 125A.
DSS
Symbol
Symbol
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (T
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
2
2
2
2
j
j
=150
=25
o
C)
o
C(unless otherwise specified)
2
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
I
I
dI/dt=100A/µs
D
D
S
S
GS
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
=40A
=30A
G
D
=45A, V
=30A, V
=0.5Ω
=3.3Ω,V
=V
=10V, I
=30V, V
=24V ,V
=24V
=15V
=25V
=0V, I
=10V, I
=4.5V, I
= ±20V
=4.5V
=0V
GS
Test Conditions
Test Conditions
, I
D
GS
GS
D
=1mA
D
D
D
GS
=250uA
GS
GS
=30A
=0V
=0V,
=45A
=30A
=10V
=0V
=0V
Min.
Min.
0.8
30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4090 6540
1010
Typ.
Typ.
120
890
8.5
55
60
38
14
83
66
51
63
-
-
-
-
-
-
-
-
±100
Max. Units
Max. Units
1.3
25
96
4
6
3
1
-
-
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
uA
uA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
2

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